Designing Of Large Capacity FIFO Based On Double Ports RAM

The IGBT full name is Insulate Gate Bipolar Transistor,namely the insulation grid bipolar transistor,it is new semiconductor devices which rapidly develop in recent years. Not only it has the MOSFET shutter such as:Fast switching speed,high input impedance, good Thermal stability,small driver power and the driving circuit simple,at the same time,it has the GTR merits such as:high Blocking voltage,strong carries ability.It extremely expand semiconductor device's application of power domain.It is called that it is one of the electric power semiconductor devices with the most Development prospects.This article introduced that it has faced the present situation and future development trend in the IGBT 20-30 year's developing process.Through IGBT elementary knowledge which studies,embarking from the IGBT principle of work,this paper has discussed the component design parameter to the component characteristic influence,summarized the main parameter design basis,and has carried on the IGBT component structural design and the computer simulation according to the above.The main content is the IGBT component's open and shutdown characteristic fundamental research and the computer simulation analysis(using the medici software).This paper briefly discusses the feasibility of computer simulation of semiconductor devices,the basic characteristics of MEDICI software,the use of the MEDICI and the selection of physical model,we simulate characteristics of IGBT.This including the basic structure,impurity distribution,potential distribution,output,transfer characteristics,and blocking properties.To using the software,MEDICI simulation theory and the choice of physical model must be clear first.In this paper we use classical simulation,drift-diffusion model simulation.And on this basis, the appropriate model is select for analysis and simulation to ensure the accuracy and convergence.The final results turn out to be good.