Study On Physical Modeling Of SPT+IGBT Chip

Power semiconductor devices have rapidly become an indispensable part of people's life since their appearance.Among them,IGBT has the advantages of high input impedance,fast switching speed,low loss,good thermal stability,and has been widely used.The simulation model of IGBT has always been the focus of global research.The newly developed enhanced planar gate Soft Punch Through+(SPT+)IGBT uses a new structure,which has performance advantages such as low loss,high short-circuit current capability,and strong turn-off endurance.However,the structure of SPT+chip has great changes compared with the traditional structure,and the simulation of SPT+chip directly using the IGBT model based on the traditional structure will have large errors or even non-convergence problems.Therefore,to establish an accurate simulation model suitable for the new structure IGBT,this article takes a 3300V/62.5A SPT+IGBT chip independently developed by Global Energy Internet Research Institute Co.,Ltd.as the research object.By analyzing the influence of structural change on chip modeling,the research is carried out around SPT+IGBT chip modeling.This paper studies the differences between the SPT+IGBT chip structure and the traditional chip structure.After investigating and analyzing the main IGBT modeling methods,in order to show the influence of chip structure change on the working characteristics in the model,and ensure the applicability and expansibility of the model,the mechanism modeling of SPT+IGBT is selected.Secondly,the structure and working characteristics of SPT+IGBT are analyzed.In view of the difference between SPT+IGBT and traditional IGBT in chip structure,the influence of chip structure change on the relevant assumptions and boundary conditions in the steady-state and transient models is analyzed respectively.Based on the Hefner model,the boundary conditions and relevant assumptions are modified,the model equations of steady-state and transient models are derived,and the model is realized in MATLAB simulation software.Finally,the experimental extraction and empirical formula are used to extract the model parameters,and the static and transient characteristics of IGBT are tested on the static characteristics test platform and the dual pulse dynamic characteristics test platform respectively,and the experimental waveforms of the output characteristic and the shutdown transient characteristic are obtained.The correctness and advantages of the improved model are verified by comparing the simulated and measured waveforms of the improved model and the original model.The research results provide a more accurate model for the simulation application of SPT+IGBT.