The Acceleratedlifetime-Test Method Research On High Power Laser Diode

808nm high power laser diodes are widely used in pumping solid state laser, laser processing, laser medicating and so on. With the techniques developing day after day, reliability and lifetime are being paid much attention. However, so far the lifetime-test experiments on long lifetime Al-free lasers at high temperature are quite few, even less in our country. A number of such accelerated lifetime testing methods have been suggested assuming certain activation energies of degradation mechanisms: however none of those methods could predict the reasonable accuracy lifetime. This paper is to solve this problem. First, we fabricated InGaAsP/GaAs Al-free high power laser diode single emitter by MOCVD techniques, which emission wavelength is 808nm, and the power amounts to 1W; Through accelerated aging, under the temperature of 40℃,60℃,80℃, we calculated activation energy in both abrupt and gradual degradation; Analysis the failure data by chart estimate method and value analysis method, Contrasts mutually, we got each reliability parameter of laser; Last, we gave some failure analysis simply. The main contents are:1. Designed and finished a group of devices, with the screening process we divide the lasers into two parts: fast degradation devices and slow degradation devices. Calculated the fast degradation activation energy is 0.38eV, the mean lifetime of lasers at room temperature were extrapolated to be about 100 hours.2. Design the process of accelerated aging test: type of acceleration,stress,level,measure parameter,sample,aging time,end time,failure criteria,test periodic and data-processing.3. With the assumption that semiconductor laser lifetime obeys Weibull distribution, then we begin to analysis the data. Our supposition has been confirmed to be reasonable based on acceleration curve. Together with chart estimate method and value analysis method, we could get life and reliability parameter, including characteristic life,shape parameter,mean lifetime,life variance,activation energy and etc. The results from two different methods, are contrasted and examined, they are more reasonable. Calculated long life activation energy is 0.46eV, extrapolated life-time in room temperature is 2500 hours.4.Finally we give some simple failure analysis and some advices to the failure samples after the experiment.