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Research On Key Technologies Of Monolithically Integrated Photoreceiver Front-End And Relevant Novel Optoelectronic Devices

Posted on:2009-08-08Degree:DoctorType:Dissertation
Country:ChinaCandidate:Y Q LiFull Text:PDF
GTID:1118360245469621Subject:Electromagnetic field and microwave technology
Abstract/Summary:PDF Full Text Request
The Internet is the driving force behind the optical fiber communications. The next generation optical communication network with characteristics of integration, low cost and high dependability requires advanced optoelectronic devices. Compared with the discrete optoelectronic devices, integrated optoelectronic devices have the advantages of compact size, lower parasitics, lower cost, better performance and higher reliability. Integrated optoelectronic devices have already attracted tremendous attentions around the world.The research in this paper is supported by grants from The National Basic Research Program of China (No.2003CB314902), The National High Technology Research and Development Program of China (No.2003AA31g050, No.2006AA03Z416, No.2007AA03Z418), The National Natural Science Foundation of China (No.60576018), Key Program of the National Natural Science Foundation of China(No. 90601002) and Program of Key International Science and Technology Cooperation Projects (2006DFB11110).In this thesis, a great deal of research work can be described as follow: theory and fabrication processes of heterojunction bipolar transistor, monolithically integrated photoreceiver and integrated demultiplexing optical receiver with specific microstructures. The main achievements are listed as follows.1. Based on HBT physics model and the expressions of each parameters the relationships of physical parameters of InP based HBT were studied. Optimized structure of InP-based HBT used for OEIC application was designed.2. Based on the process line of laboratory, the fabrication processes of InP/InGaAs HBT were developed and optimized. The current-gain cutoff frequency of 38GHz, turn-on voltage of 0.43V, breakdown voltage of more than 2V, and DC current gain of about 100 were realized in the InP HBT with 2μm emitter width grown by MBE. The current-gain cutoff frequency of 40GHz, turn-on voltage of 0.4V, breakdown voltage of more than 2 V, and DC current gain of about 30 were realized in the InP HBT with 2μm emitter width grown by MOCVD.3. The large signal equivalent circuit models of HBT and high-frequency model of photodetector were introduced and model parameters were extracted. Based on the models of HBT and photodetector, several forms of photoreceiver front-end's circuits were designed and optimized. The monolithically integrated PIN-PD+HBT photoreceiver front-end was fabricated. In this integrated device, the incidence mesa area of PIN photodetector is 22×22μm~2, InP/InGaAs HBT's emitter width is 3μm, the square resistance of NiCr is 100Ω, the amplifier circuit form is transimpedance negative feedback one stage common-emitter amplifier. The 3dB bandwidth of 3GHz was obtained in the integrated device with a reverse bias of 2.5V for detector and a reverse bias of 2V for the circuit.4. RCE-PD+HBT monolithically integrated photoreceiver front-end was further studied. Such integrated structure could solve the trade off between the cutoff frequency of HBT and the quantum efficiency of the photodetector. The performances of RCE-PD+HBT were analyzed and the preliminary fabrication and characteristics of the integrated device were carried out.5. RCE-PD+HBT monolithically integrated photoreceiver front-end by using InP/GaAs heteroepitaxy was proposed. As the key part of this integrated device, a GaAs based InP/InGaAs HBT was demonstrated. The current-gain cutoff frequency of 10GHz, turn-on voltage of 0.4V, breakdown voltage of more than 2V, and DC current gain of about 20 were realized in the device. This work was an embodiment of our laboratory's idea that using heteroepitaxy technologies to realize optoelectronic integration, and also proved that our heteroepitaxy quality was good enough for device.6. A novel integrated demultiplexing optical receiver for reconfigurable optical add-drop multiplexer applications was proposed. This integrated device can be used for demultiplexing and receiving WDM multi-wavelength signals. The principle and critical fabrication processes of the integrated device were studied. Two different transmission wavelength of 1533.6nm and 1518.6nm and FWHM of about 0.5nm were realized in a GaAs based filter with ladder cavity.7. The specific pattern transparent ohmic contact microstructure was investigated further. The simulation results proved that ohmic contact microstructure in gridding or cirque shape could remarkably reduce junction capacitance of the photodetector.
Keywords/Search Tags:heterojunction bipolar transistor, photodetector, optoelectronic integrated circuit, photoreceiver, integrated demultiplexing optical receiver, ohmic contact microstructure
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