Optimization Design Of CMOS Low-Noise-Amplifier And Active Inductor

Low noise amplifier(LNA) is a key component in the front-end of RF transceiver. As the first stage of the system, its gain, noise figure(NF) and linearity directly take effect on the whole circuit. An optimization design procedure of CMOS cascode LNA is presented by smith chart through the parameter sweep of the width of common source stage, source inductor and gate inductor in ADS. Simulation results indicate that with the proposed approach, simultaneous noise and input matching is achieved.Ultra-wide-band(UWB) systems are emerging wireless technology capable of transmitting data over a wide frequency band with low power and higher data rate. A UWB LNA bases on 0.18um CMOS technology is presented, from 3.1GHz to 10.6GHz, S11<-9.6dB, S21>17.245dB, and NF<4.782dB.Base on the theory that the output of source follower amplifier acts like an inductor if the input is driven by a large resistor, a novel active inductor with improved quality factor(Q) is proposed, and the maximum Q can be 334.