| In modern wireless communication, microwave power amplifer is necessary and play a critical role,and even the whole communication system will be affected by its performance. Wideband microwave power amplifiers are increasingly extensively applied in radar and Electron Countermeasure while wideband power amplifier design is still in initial stage in China.We place emphasis on X-band wideband microwave power amplifiers design in the thesis. We has studied some key issues such as wideband matching and power combining techniques to implement X-band wideband microwave power amplifiers. Through theoretical analysis and simulation, we have designed the GaAs MESFET power amplifier. There are some development for the wideband power amplifier: Lange coupler, Wilkinson power combiner, the drive stage power amplifier and the last stage power amplifier.First, we analyse the power amplifier in theory in the circuit mode, input and output matching circuit . Second, ADS was used to optimize and simulate the circuits. The amplifier was developed with the Pout of 36dBmmax and the gain of 15 dBmin over the 8～12GHz range. Its other major features include the ripple in band 2dB, the VSWR 2. The study will be power unit for the amplifier in the next step. |
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