RFIC Design And Simulation Of Power Amplifier

According to the requirment of output power and efficiency in RF front-end transceiver which applys to micro-satellite"General Cell", this thesis presents the design process of a two-stage fully integrated RF power amplifier in a standard CMOS technology. And the resonance network has been optimized. CMOS radio frequency class-F power amplifier has been designed by using TSMC 0.18μm RF CMOS technics.At first, the thesis makes a brief introduction towards a novel concept"General Cell"and according to its demands to the electronic system, uplink, downlink and intersatellite link have been analysed and evaluated. Then a solution of transceiver design is proposed. RF front-end design communication is achieved by using nRF2401.Secondly, the classification of amplifiers is presented and its relations with modulations as well as the methods for higher efficiency have been claified. Accordingly, class D, class E and class F PAs have been specifically introduced and compared with its merits and demerits.Then based on these theories, a single-end two-stage fully integrated PA has been designed. In output level, the topoplogy of class-F is used. By using Agilent ADS, this PA delivers a 21dBm output power at 2.45GHz, with the power added efficiency (PAE) of 48%. Furthermore, a fully integrated differential coupling PA is designed by using interstage network, differential topolopy and mode-locking techniques, and the output power can be improved.With a simulation frequency of 2.45GHz, the output power is 26.7dBm and the PAE is 43.8%.In the end, the layout is completed by using TSMC 0.18μm RF CMOS technics.