The Research And Application Of Feature Size-miniaturization In Metal Gate Process

The characteristic of the Aluminium-Gate process is its efficient flow which applied in many realms, especially consumable product. It is imperative to shrink the channel length for the advanced application. But with the length lessening, the stability of process will be out of control. For example: shift of threshold voltage, standby current out of criterion etc. These problems make the miniaturization of Al-Gate technology unfeasible for long time.During the development we applied typical process model: diffusion, Ion implantation, oxidation and electrical model: current-voltage model, mobility model etc. By setting appropriate Boundary Condition, Numerical Method to simulate Mobile Carriers,Electric Fields,Potential,Currents etc, we fixed the criterion of sub-module. We developed 3.0um Al-gate process. And trial-produce Engineer lot to check the characteristics of process. We studied the failure mode and potential cause of the process issue, for instance threshold voltage shift and large standby current etc.By setting pivotal monitor method for inline monitor and WAT test, enhanced the stability and controllability of process.Based on 3.0um Al-gate process and studied the characteristics of the process, adopt Silicon Local Oxidation and P-N junction technology to realize device isolation. We developed a new technology: 2.0um Al-gate process, conquered roughness issue which caused by metal etch. And apply it in mass production successfully. The CP yield was gratifying: average >94%.This process could help the enterprise to reduce the cost, improved production efficiency and raise the productivity of the product line greatly.