A Design Of Dual-channel Gate Drive Circuit

With tense electric energy increasing, energy saving has been given more attention. Power device has been widely applied, thanks to the rapid development of power devices and integrated circuit manufacturing technology, smart power integrated circuit(SPIC) has been widely used in lighting, automotive electronics, industrial control, aerospace equipment, etc. With its high reliability, low power consumption, high stability and small volume, SPIC has been widely used.According to the requirement of the power device’s the gate drive signal, we design a dual channel gate drive circuit based on the CSMC 1 um BCD technology platform, the output has dead band time of high-end and low-end drive signal, it is mainly used for driving power devices connected by a half bridge structure. The gate drive circuit internal integrates the function of perfect monitoring and protection, when the under voltage occurs in the power supply or power device current is too large, it can timely shut off high low-end output signal. After the voltage is back to normal, the output of the drive signal will be on in time. The output drive signal is on after a certain time when the current returns to normal. The characteristics of the circuit: The 5 V or 3.3 V voltage amplitude controlling signals can be compatible with the input. The magnetic isolation circuit has been the integrated internally, so it does not need to be integrated power devices of high voltage, compared to other isolating circuit, it has lower power consumption and higher reliability of the system.The main work of this paper: the design of the overall design diagram dual-channel gate driver circuit have been given with a detailed analysis of power devices’ s gate driving signal requirements. For the sub-module circuits, introduction of a presentation function, reasonable circuit structure designed sub-module circuit schematic and simulation have been finished. The input stage circuit, monitoring and protection circuit and driver circuit with isolation have been introduced in detail. Finally, the circuit simulation is done.