A Study On Wet Oxidation Processing In Vertical-Cavity Surface-Emitting Semiconductor Lasers

The wet oxidation is a new method of making Vertical-Cavity Su rface-Emitting Semiconductor Lasers in recent years. It is easier for m anipulation and control of oxidation dimension than other traditional te chniques. The oxidized layer could also come to being a strong-confi nement for output light.The rate equations of oxidation were calculated from the principle of oxidation reaction in this paper, which depended on the theory of Si oxidation. Then a lot of experiments have been done. The results proved that the equations were suitable for experimental data. We studied the reasons of shrinkage, cracks and porous structure in the high aluminum oxidized layer. And the influence of these phenomena on devices was also discussed. Considering these factors comprehensively, we resolved the influence by using some new techniques and prepared the low threshold current VCSEL with good performances.