Study On Model Of Double-gate Tunneling Field-effect Transistor(TFET)

MOS transistor is the mainstream of the world today, it has good electrical properties, but its physical size is close to the limit and the problems such as big power consumption is becoming more and more prominent. In order to meet the needs of the development of future integrated circuit, a new type of field-effect transistor such as double- gate tunneling field-effect transistor, fin field-effect transistor won the wide attention and research in recent years. Among them, the double-gate tunneling field-effect transistor has many advantages such as the low threshold swing/ low consumption/ have good compatibility with CMOS process and so on, therefore it is considered to be a good alternative to a MOS transistor. Different from the method of the doping of the same type in source and leakage area which has been widely used to MOS transistor in circuit, source and leakage area of double-gate tunneling field-effect transistor doping in the opposite way, thus leading to electrons tunneling phenomenon which is different from the working mechanism of MOS transistor under the action of gate- voltage in the interface between source area and the channel, caused the drain current(ID). Because of the special ge neration mechanism of drain current, the subthreshold swing of tunneling field-effect transistor is down to 60 mV/dec, its power consumption has been effectively reduced, but also facing the problem of smaller on-state current at work. So, in this paper we use computer software TC AD-ATLAS to simulate GaSb As homojuction double-gate tunneling field-effect transistor、AlxGa1-xSb/Ga As heterojunction double-gate tunneling field-effect transistor 、 SixGe1-x/Inx Ga1-xP heterojunction double- gate tunneling field-effect transistor. The three different types of double- gate tunneling field-effect transistor showed very good device performance in simulation, such as big on-state current, the ideal current switch ratio, the low subthreshold swing. Among the Alx Ga1-xSb/GaAs/ Six Ge1-x/InxGa1-xP heterojunction double-gate unneling field-effect transistor, we found change the value of the material mole fraction x in heterojunction can cause changes in the device performance. So we through optimization and filter the value of the material mole fraction x, found Al0.05Ga0.95Sb/ GaAs(the mole fraction x of aluminum is 0.05), heterojunction、Si0.9Ge0.1/In0.01Ga0.99P(the mole fraction x of Si and In 0.9 and 0.01, respectively) heterojunction can increase on-sate current of double-gate tunneling field-effect transistor get increases and improve its current switch so that achieve the goal of optimizing device performance.