Research Of GaAs/InP Wafer Bonding Technology

The research work of this thesis is carried out on the basis of the sub-project of "Innovation and Fundamental Research on Low-Temperature Wafer Bonding and Quasi-monolithic Optoelectronics Integration Technologies" (Project No. 2003CB314900) of the project "Technology Innovation and Fundamental Research on New Generation Communications Optoelectronic Integrated Devices and Important Structures of Optical Fibers", with professor Ren Xiaomin as the chief Scientist, under the State Key Fundamental Research Development Program (Program 973), the grand research project "Material Technology Research of GaAs, InP-based Functional Tapered Structure and Their Applications of in Novel Optoelectronic Devices" (Project No. 90201035) of "Optical Information Functional Material" under the National Natural Science Funds, undertaken by professor Ren Xiaomin, and the National High-tech (863) Program project "High Performance InP and GaAs-based Resonant Cavity Enhanced Long-wavelength Photodetectors" undertaken by professor Huang Yongqing (Project No. 2003AA3 lg050).In the recent years, an integration technology named "Wafer Bonding" has been developed to provide the possibilities to combine the advantages of different materials, improve the flexibility of device designs and implement high-performance devices. It has been used in many fields, including optoelectronic devices, micro-elctronic circuits, sensors, power devices and micro-machine process.The quality of GaAs/InP heterostructures grown by epitaxial grown technology is too poor to fabricate the device due to the large lattice mismatch between GaAs and InP. In order to implement high-performance devices , we introduced wafer bonding technology and did research on that. We did research on low-temperature technology that is low-cost and efficient. The main research work in this thesis is listed below:1. Studied the distribution of stresses in the interface of bonded wafers.The characteristics of distribution of stresses.which influence the quality of bonded wafers,are discussed.2. Studied the contact between two wafers at room temperature,discussed the...