| The reseach described in this thesis is supported by grants from The National Basic Research Program of China (No.2003CB314902), The National High Technology Research and Development Program of China (No:2006AA03Z416and2007AA03Z418), Key Program project of the National Natural Science Foundation of China(No.90201035) and the project of the National Natural Science Foundation of China(No:60576018).With the rapid development of information technology, it’s becoming an urgent need for large capability, high speed transmission and management. Substituting photon for electron, photon technology or optoelectronic technology for micro-electronic technology, and developing optical integration or optoelectronic integration will push information technology to a brand-new period. In this thesis, a great deal of research work can be described as follow:low-temperature wafer bonding process based on boride treatment, designing and fabrication of Si based long-wavelength avalanche photodetector. The main achievements are listed as follows.1. The interfacial thermal stresses arising from wafer bonding were analysed by Suhir’stress theory in multilayered elastic thin films. Physical model was established, and the stresses distribution in the bonding interface of GaAs/InP、Si/InP were analysed. The calculation indicated that the normal stress at the interface were concentrated near the center of the bonding pair and minished to zero when moved from the center to the edge, and it’s opposite for the shearing and peeling stresses. Reducing the annealing temperature was the most effective method to decrease the thermal stresses. 2. An approach for Si/InP、GaAs/InP、Si/Si low-temperature wafer bonding based on boride treatment was presented, which were simple and nontoxic, and the annealing temperatures were270℃、290℃、180℃respectively. The scanning electron microscopy(SEM) and transmission electron microscope(TEM) images of the cleaving interface showed that the bonded wafers were tightly adhesive, and no fracture or void occurred along the bonded interface. The current-voltage characteristics, X-ray diffraction (XRD) and photoluminescence (PL) revealed that crystal quality of the bonded MQW was preserved with little inference to the electronic and optical characteristics. This low-temperature wafer bonding has been awarded a patent for invention.3. The X-ray photoelectron spectroscopy(XPS) and Raman spectroscopy analyses ensured the chemical bonds on the boride-treated Si、InP and GaAs wafer surfaces were Si-O-B|P-O-B and As-O-B respectively. These chemical bonds would reconstruct to form a stable structure after wafer bonded. For Si/InP wafer bonding, the intermediate layer was B2O3-P2Ox-SiO2with thickness of about21nm, and, for GaAs/InP wafer bonding, the intermediate layer was B2O3-P2Ox-As2O3with thickness of about17nm. These stable structures ensure the strong bonding at such low annealing temperature.4. The device model of Si/InGaAs SAM-APD (separate absorption and multiplication avalanche photodiode) was constructed based on Poisson equation and carrier continuity equation. The frequency response of device model was simulated by using matrix algebra method and the influence of multiplication factor, multiplication layer thickness and absorption layer thickness on frequency response characteristics was emphatically analyzed.5. Si based long-wavelength avalanche photodetector with Si Multiplication layer and InGaAs absorption layer has been designed and fabricated. The size of photosensitive surface is50x70μm2. The dark current at90%of the breakdown voltage (41V) is0.1μA. The photocurrent and multiplication factor at90%of the breakdown voltage (41V) and light power of2mw is0.7mA and19. |
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