The Research Of High Characteristic Temperature AlInGaAs/AlGaAs Strained Quantum Well Lasers

To settle the problems that on the condition of high temperature and high power, threshold current of semiconductor lasers will raise, wavelength excursion will occur, radiation efficiency will descend and so on, we have designed and fabricated AlInGaAs/AlGaAs strained layer quantum well lasers with high characteristic temperature. At first, we put forward four master factors that affect the characteristictemperature of quantum well lasers, and carry through theoretic analyses.Take AlInGaAs/AlGaAs as an example, we have researched that strained layer has the advantage of improving lasers characteristic temperature. Through synthesize consideration every factor, we have optimized AlInGaAs/AlGaAs lasers epitaxial layer structure, and fabricated successfully the device with the wavelength of 808nm.At last, we have done temperature characteristics experiment through using our designed new type control-temperature equipment. And we have analyzed experiment results. By analyzing, we have gained that 808nm AlInGaAs/AlGaAs strained layer quantum well lasers characteristic temperature T₀ is higher than unstrained layer AlGaAs/AlGaAs lasers'. Under the room temperature, AlInGaAs/AlGaAs strained layer quantum well lasers' characteristic temperature is as high as 200K, slope efficiency is 0.88W/A.