| Modern epitaxy techniques such as molecular beam epitaxy, metal-organic chemical vapor deposition and variants such as gas-source molecular beam epitaxy and chemical beam epitaxy permit the fabrication of semiconductor materials whose band structure is tailored through the growth itself. The focus of this work is the use of gas source molecular beam epitaxy in the fabrication of strained layer and quantum well photonic devices in the InGaAsP materials system. In particular, strain is utilized in the reduction of threshold current densities of 1.3 and 1.55 m m wavelength lasers, as well as high power 980nm lasers. The spectral response of InGaAs photodiodes is extended beyond 1.65 m m by using a multiple quantum well strain-compensated absorption region. Finally, this strain-compensated absorption region is used in the fabrication of a low-noise avalanche photodiode that has a spectral response to a wavelength of 2.0 m m. |
