Growth Of ZnO Thin Films On Si Substrate And Aging Test Of Si-based GaN Traffic-green LED

This thesis contains two parts: 1. MOCVD growth of ZnO thin films on Si(1 1 1) substrate; 2. Si-based GaN traffic-green light emitting diode degradation under different electrical stresses.1. MOCVD growth of ZnO thin films on Si(l 1 1) substrateZnO, as a wide direct-band semiconductor, attracts much attention as GaN in optoelectronics research field. Although recently the p-i-n junction ZnO LED has been realized, and high-quality ZnO films have been reported somewhere, there is still a gap to its commercial application. Recently most of ZnO films have been grown on sapphire(Al₂O₃) , but Al₂O₃ is expensive, electrically insulating and bad thermally conductive, which introduced complexity to device fabrication process when grown crystals are applied to injection-light-emitting devices. But electrically and thermally conductive Si substrate is cheaper than Al₂O₃ substrate, which will reduce the cost of ZnO-LED. Si, as one of the first semiconductors, has a very mature technology, such as mature fabrication, mature integration and so on. Thus, it will be very good for realizing the optical-electric integration based on ZnO. However, due to the high mismatch of the crystal structure and thermal expansion between ZnO films and Si substrate, it is difficult to directly grow ZnO film on Si substrate. Therefore, in order to improve the quality of the film, different materials have been introduced between ZnO and Si as buffers. ZnO films were prepared by atmospheric-pressure MOCVD on Ti/Si (111) templates, with DEZn, DMZn and deionized water as Zn precursors and O precursors, respectively. And the effect of the growth condition on ZnO films was studied.ZnO films were prepared by atmospheric-pressure MOCVD on Ti/Si (111) templates. The Ti film on Si (111) was deposited by electron beam evaporation, which is 1 -2nm thick. First, when ZnO film was grown with DEZn and deionized water as Zn precursors and O precursors, respectively, the different growth times of the low-temperature ZnO (LT-ZnO)...