Growth Study Of GaN Films On Si Substrate And Aging Test Of LED Devices

Gallium Nitride, as a wide band gap semiconductor, has attracted more and more attentions and advanced rapidly. It is mainly due to which can certainly used for signage and display applications, as well as potentially suited for general illumination applications. Up to date, sapphire is the most commonly used substrate for the GaN epitaxy. But as the substrate, sapphire itself is not conductive and also very hard to detach. Compared with sapphire, silicon, the most important semiconductor material, should be another promising substrate for GaN. Si substrate is a very attractive alternative for GaN film due to its low cost, large size, high quality, well-conductive and the possibility of the integration of optoelectronics or high-power electronics with Si-based electronics on the same chip. However silicon substrate have a significant lattice and thermal mismatch to GaN. When the grown film exceeds a critical thickness, such high lattice mismatch is responsible for high defect densities and mechanical strain in GaN epilayer, while thermal expansion mismatch will leading to serious cracking in GaN epilayer during the post-growth cooling process. Recently, there is a great progress in the growth of GaN epilayer on Si substrate, as well as the research of GaN LED on Si substrate is booming.In this thesis, the effect of Silicon delta-doping on the properties of GaN blue LED films on Si substrate was studied firstly, secondly the aging tests of GaN LEDs on Si substrate were studied, and then the growth and properties analysis of ZnO films grown on Cu/Si(111) template by atmospheric pressure MOCVD were done. Some encouraging results are following as:1 We studied the effect of Silicon delta-doping on the crystal properties of GaN blue LED films on Si substrate by comparing the relevant properties of delta-doped sample and untreated sample. It was found that the relevant properties of GaN film...