Research On Side-Illuminated Vertical-Cavity RCE Photodiodes And Fabrication Of Taper Structures With Angles On Epitaxial Layer For InP-Based Matarials

The research work of this thesis was supported by grants from National Basic Research Program of China, "Basic Research on Integrated Optoelectronic Devices and Microstructure Optical Fibers with Structure and Technology Innovations for Future Advanced Optical Communications" (2003CB314900), the 863 High Technology Project of China (No.2003AA31g050 &No.2003AA312020) and Science & Technology Key Project of Ministry of Education (No.02028).Recently, the increasing demand for bandwidth of telecommunication has greatly promoted the development of optical fiber communications. Novel integrated optoelctronic devices are prequisite to the evolution of the optical communication systems. Low-cost and high-speed optical module are especial important for WDM system. To reduce the cost of optical modules, simplification of the alignment of the optical axis and a reduction of the number of the optical commponets such as lenses are key factors. In the case of the photodiode (PD), large optical axis misalignment tolerance is the most important factor for achieving low cost. Side-illuminated photodiodes are attractive detectors for surface hybrid integration used V-grooved silicon or silica-based plannar lightwave circuit platform, because they can be easily filp-chip-mounted onto V-grooved silicon or PLC platform. Optical modules using side-illuminates photodiodes simplify assembly. It is good to use Si technology to reduce cost for surface hybrid integration. The photodiodes, which used for surface hybrid integration should detect the light, which parallels to surface-mountable platform, because these photodiodes can be easily filp-chip-mounted onto V-grooved silicon or PLC platform. Side-illuminated photodiodes can rightly fit for these requirements.