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Research On Long-Wavelength, Tunable Photodetector And Its Key Fabrication Technologies For WDM Demultiplexing Receiving Application

Posted on:2007-07-19Degree:DoctorType:Dissertation
Country:ChinaCandidate:X Y WangFull Text:PDF
GTID:1118360185467816Subject:Electromagnetic field and microwave technology
Abstract/Summary:PDF Full Text Request
With the rapid development of WDM optical communications, integrated optoelectronic devices have attracted tremendous attention. A novel kind of integrated devices, featuring the wavelength-selective detection, high-speed, high sensitivity and wide tuning range has many applications.The research in this paper is supported by grants from The National Basic Research Program of China (No.2003CB314902), The National High Technology Research and Development Program of. China(No: 2003AA31g050 and 2003AA312020), Key Program project of the National Natural Science Foundation of China (No.90201035), Major Research Plan Program of the National Natural Science Foundation of China(No.90104003) and the project of the National Natural Science Foundation of China (No: 60576018). In this thesis, a great deal of research work can be described as follow: fabrication processes of special functional microstructures and its applications in integrated optoelectronic devices, designing and fabrication of novel WDM integrated demultiplexing photodetectors. The main achievements are listed as follows.1. An approach for GaAs/InP wafer bonding based on thiourea treatment was presented which is simple and non-toxic. And...
Keywords/Search Tags:WDM demultiplexing receiving device, resonant cavity enhanced (RCE) photodetector, low temperature wafer bonding, InP/Air gap DBR, dynamic Etch Mask Technique, one-mirror inclined three-mirror cavity (OMITMiC)
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