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The Characteristics Of Resonant Cavity Enhanced Photodetector

Posted on:2010-01-29Degree:MasterType:Thesis
Country:ChinaCandidate:Y ZhouFull Text:PDF
GTID:2208360275482817Subject:Optical Engineering
Abstract/Summary:PDF Full Text Request
The development of a new generation of optical fiber communication is dependent on the breakthroughs of the semiconductor optoelectronic devices. The resonant cavity enhanced photodiode is a new type of vertical-cavity optoelectronic devices, the constraint relations between the quantum efficiency and the response rate in the traditional PIN photo detectors is eliminated by placing the thin absorbing layer in the resonant cavity. And the high response rate, high quantum efficiency and the wavelength selective detection are also obtained. This device can work without bias voltage, and it is especially suitable for the DWDM optical fiber communication systems, which is demanding for high precision wavelength.Firstly, the development of optical fiber communication system is summarized, as well as the demultiplexing receiver technology in wavelength division multiplexing system and the relevant background of RCE photodetectors, and the development process of RCE photodetectors which are used for optical fiber communication is summarized in detail. And then, the direction of development for RCE photodetectors is analyzed and the main content and significance of this paper is also expatiated. All of this work is preparing for the researching. The general structure and the working principle of the device is analyzed, the optical transfer matrix method which is used for theoretical analysis is analyzed and derived in detail, and it provided a theoretical foundation for the analysis latter.Then, the material, structure of the DBR mirrors in the resonant cavity and the overall structure of the RCE photodetector are analyzed and researched. The "absentee layer" theory in the modern optical thin film technology has been used for analysis and designing the DBR mirror in RCE photodetector. The Si based PIN RCE photodetector with SiGe absorption layer, which can be used in optical fiber communication system, is designed. The characteristics of photodetectors, which is designed, including the DBR mirror reflectivity and the quantum efficiency is analyzed and simulated in numerical. And the standing wave effects (SWE) for the quantum efficiency of the device and the resonant cavity enhanced effect of the resonant cavity are analyzed for the structural characteristics of the RCE detector.Finally, considering the numerical simulation and analysis results of the RCE photodetector, the structure of the device is optimal designed. These results offer high quantum efficiency and high response speed for the RCE photodetector. The designing and numerical simulation methods has been a guiding significance to design and manufacture the high-performance RCE photodetector to meet the requirements for the optical fiber communication.
Keywords/Search Tags:photodetector, resonant cavity, DBR, quantum efficiency, absentee layer
PDF Full Text Request
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