Design And Test Of Amplified Circuit Of The Optical Receiver

With the development of sub-micro Silicon Integration Circuit, the frequencyproperties of MOS transistors have been gradually increased, and its value of the fThas been above 100 GHz. Silicon-Optical Integrated Receivers have been graduallyapplied, whose advantages lie in the supplies from the various functional ICs and thelow cost. However the response wavelength is less and its response speed is relativelyslow. No limits in the Multi Channel Parallel short distance transmission by means ofOptic storage system. Nowadays the research on the OEIC receivers has still in theelementary stage at abroad. Therefore the development for the high-speed integrationcircuit with self-determination intelligence property has the important significance tothe development of the china information industry and the construction of theinformation expressway. OEIC receivers are the most crucial aspect.To realize the compatibility with the Standard CMOS OEIC receivers, we needto develop the high speed and low noise detector and high gains, wide band and lownoise amplified circuit. Consequently the DPD with the Shallow Tunnel Isolation (STI)structure is adopted as the detector;the CFA as the preamplifier of the receivers, andthe induced amplifier as the main amplifier.1) Design the DPD detector with the STI structure compatible with the StandardCMOS process. Through the Device Simulation, we made sense of the operationalprinciple of the DPD as well as to decrease its speed and responsivity.2) Design and stimulation of the OEIC receivers. By means of the Method ofOpen-Circuit Time Constants Method to reveal the wide band and high-speedprinciples of the CFA, we acquire the receiver amplifier circuit whose speed isabove 1 GB/s with the gain of 60dB.3) Test of the IC. Test the corresponding DPD detector, we acquire the excellentproperties which the leakage is less than 30pA and the responsibility is 0.066A/w。According to the specification, we designed the high speed PCB testing board. Thesystem testing has been carried out for the detector embedded IC and its frequencyproperties are fairly ideal.