Studies On Silicon Waveguide Raman Laser

The optical properties of silicon materials have been recognized in recently years, and their applications in optoelectronics have attracted more and more attention. On the one hand, the silicon material has a variety of excellent nonlinear optical properties, on the other hand, the silicon devices have a very mature manufacturing process. Both the advantages make silicon be the potential alternative of the traditional optical materials.The electronic devices (such as COMS, diodes, transistors and etc.) and the optical devices (such as lasers, detectors, optical switches, optical modulators, optical circuits and etc.) can be integrated in one silicon ship to constitute optoelectronic integrated devices. They can be applied to optical communication, bio-sensing, military science, optical instrumentations, space aircrafts, optical interconnection, optical computing and artificial intelligence system.This paper focuses on the silicon waveguide Raman laser. The main contents of this thesis are as follows:1)1.342μm laser is obtained by using an all-solid-state Nd:YV04laser, and the laser coupling from free-space to fiber is realized. The Nd:YVO4laser is pumped by880nm laser diode. When the pump power is5.6W, the1.342p.m laser is0.52W and the output power from the fiber is0.39W, the corresponding coupling efficiency is75%. The highest output power from the fiber is0.86W, which is obtained when the pump power is13.8W.2) The propagating properties of1.342μm laser in silicon waveguide are experimentally studied. The transmitted light pattern and spectrum are analyzed. The theoretical analysis of the silicon waveguide Raman laser is given. The threshold condition and the Input-Output characteristics are simulated by using the transfer equations. 3) The transfer equations of the extracavity silicon Raman laser are numerically solved. The results show that a silicon waveguide Mid-IR Raman laser is possible. Considering the situation of pumping wavelength at2.94μm achievable by using an Er:YAG laser, the Raman laser wavelength at3.47μm with the521cm-1Raman shift, the effective mode area Aeff=5μm2, the waveguide length L=30mm, and the linear loss a=0.5dB/cm, the calculated threshold is smaller than1W. The output characteristics with different conditions are calculated and discussed.