| Silicon-on-insulalor (SOI) and porous silicon are two kinds of advanced silicon based material for microelectronics and opto-electronics. According to the requirement of Innovation Engineering in Chinese Academy of Sciences, the work in this thesis focused on fabrication of SOI material with epitaxial layer transfer of porous silicon and study of luminescence of modified porous silicon, and we obtained the following new results:The effect of doping and anodizing condition on the properties of porous silicon, including the microstructure, ciystallinity and surface morphology, has been studied systematically. It is found that the porous silicon and substrate have the same orientation and share a coherent boundary. But at the edge of pores, the lattice relaxes, which induces XRD peak moving of porous silicon. These results provide important information for the epitaxy on porous silicon substrate and luminescence study of porous silicon.Silicon films with high crystal quality and good electrical properties have been successfully grown on porous silicon substrate by ultra-vacuum electron beam evaporator. Many factors which affect the epitaxy qualities, especially the porosity of porous silicon and growth temperature, have been studied in detail. It is found that the pre-oxidation of porous silicon can efficiently prevent the Boron diffusion during epitaxy. The defaults along {111} are the main defects in epitaxial silicon layer. In addition, the growth mechanism on porous silicon has been discussed in view of growth kinetics.The corrosion behavior of porous silicon in HF/H2O2 solution has been studied. It is found that the inner corrosion of porous silicon takes precedence, that is, the solution enters the pores through capillary and the whole porous silicon collapses because of the simultaneous corrosion of the silicon pillars. The corrosion rate ofporous silicon in HF/H2O2 solution is several orders higher than that of bulk silicon. The research results help us to smooth the surface of SOI.After optimizing the epitaixal condition, low temperature bonding, splitting and removing of porous silicon, SOI material has been successfully fabricated for the first time in China with the epitaxial layer transfer of porous silicon (ELTRAN) The ELTRAN - SOI has been characterized and the results indicate that the top Si layer is perfect single crystal, and its thickness is uniform. The interfaces of the lop Si/SiO2 and SiO2/Si substrate are very sharp and straight. The ELTRAN-SOI has also excellent electrical properties.Carbon plasma immersion ion implantation (PIII) into the porous silicon has been studied for the first time, and obtained intense blue light. The effect of annealing temperature on the luminescence has been investigated and results show that the luminescence intensity of sample reaches maximum after annealed at 4000C. The related mechanics are also discussed. The results present a new technique to prepare silicon based blue light material.The luminescence of buried nano-cavities produced by implanting hydrogen PIII into silicon has been investigated. Samples annealed between 200-400℃ exhibit cryogenic PL with the peak at 888 nm (infrared) and the intensity reaches maximum at the temperature of 400 ℃. When the annealing temperature reaches 600℃, PL is replaced by strong (while light) EL. Based on the analysis of microstructure and chemical component of hydrogen implanted samples, the possible mechanisms for the luminescence are discussed.The luminescence of silicon co-implanted by carbon and hydrogen has been studied. It is found that room temperature blue light can be obtained from the hydrogen-implanted silicon carbide with proper carbon content. The annealing temperature influences the luminescence obviously. Analysis shows that the luminescence is possible related to the interface between the SiC/Si and hydrogen plays an important role.The BST thin film grown on porous silicon substrate has been investigated for the first time. Experiment results indicate that the porosity of...
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