Design Of Ultra Wide Band Low Noise Amplifier MMIC

The widespread application of ultra wide band wireless communication technology has raised higher requirements on the performance of RF receiving system.The RF receiving system applied in ultra wideband wireless communication needs to have characteristics such as wide operating frequency band,high sensitivity,and low power consumption.As the first stage after the antenna in the RF receiving system,the performance of low noise amplifier affects the bandwidth,noise figure,dynamic range,sensitivity and other indicators of the whole receiving system directly.Therefore,ultra wide band low noise amplifiers have a very important research significance to improve the performance of RF receiving system.In this thesis,the author conducts research on methods to achieve ultra wide band and low noise performance of amplifiers applied in RF receiving system based on a thorough investigation of related domestic and foreign literature.The main contributions of this thesis are as follow:The author designed a feedback ultra wide band low noise amplifier operating at 2-18GHz based on a 0.18μm GaAs p HEMT process.The amplifier adopts common source and cascode structure,while applying current reusing technology to reduce the power consumption.The operating band of the amplifier covers S,C,X and Ku bands.The measurement results show that the amplifier achieves an acceptable small signal gain more than 19d B with good gain flatness of±1d B.The noise figure of the amplifier is less than 1.7d B,the output power is more than 5d Bm and the power consumption is 100m W.The chip area of the amplifier is 1.75×1 mm~2.Compared with domestic and foreign designs using similar structure,this amplifier is superior in terms of noise and power consumption.The methods summarized in the thesis have some reference for the design of ultra wide band low noise amplifiers.The author also designed a distributed ultra wide band low noise amplifier operating at 0.1-26GHz based on the same process.The amplifier adopts 8-stage cascade distributed structure with peaking inductor technology.The operating band of the amplifier covers L,S,C,X,Ku and K bands.The simulation results show that the small signal gain of the amplifier is more than 15d B with gain flatness of±1d B.The noise figure of the amplifier is less than 3.5d B,the output power is more than 5d Bm and the power consumption is290m W.The chip area of the amplifier is 2.85×0.95 mm~2.