| Amorphous silicon thin-film transistors liquid crystal displays(a-Si TFT-LCD) have become the key technology in high image quality displays as note PC and LCTV. The fabricate techniques of a-Si TFT-LCD have been ripped in abroad, and very backward in home, more backward in big size, ratio of fishing product and display characteristics. As our technology now, we lay particular emphasis on improving response time of fishing product and high display characteristics of a-Si TFT-LCD. In the paper, the main content includes the analysis and design of driving circuit of high optical and high display characteristics. It also includes optimization and constitution of materials of in-box a-Si TFT.In a-Si TFT-LCD, a-Si TFT work as a switch, complete respond to signal by quickly charge to pixel capacitances in a-Si TFT on state, and store signal by keep electricity of pixel capacitance in a-Si TFT off state. The basic characteristics of a-Si TFT is getting ride of the cross effect and highly keep electricity.An a-Si TFT is consist of many layers different material. In the paper, the ITO and Al/Cr film is deposited by sputtering, a-Si and SiNx film is deposited by PECVD. The electric mobility is improved by H treating the interface of a-Si/SiNx. The characteristics and deposit parameters of these films is in keep with the request that of improving the response time of a-Si TFT-LCD.By the optical and electric characteristics of function films which have been deposited, the construct parameters of a-Si TFT which the pixel area is 166 μ m × 166μ m, aperture ratio is about 55, W/L=7, Ion/Ioff is 10~6, storage capacitor is about 0.4PF is designed on 15 in 1024×768 array. In the construct, the different thickness two layers SiNx film, different thickness and low resistance Al/Cr two layer films, one layer a-Si film and common gate storage capacitor Cs is used. In the designed a-Si TFT construct, it took high voltage driving circuit of dynamic driving to charge a-Si TFT quickly to reduce response time.
|
PDF Full Text Request