Design Of Gate Driver Based On Amorphous Silicon Thin Film Transistor For High Resolution Liquid Crystal Display

Amorphous silicon Thin Film Transistors liquid crystal display(a-Si TFT-LCD)has been modern technology which having a low processing temperature,a uniform device performance,low cost and suitable for large-area display characteristics.In recent years,with the progress of science and technology,especially in integrated gate drive circuit used in the a-Si TFT-LCD,not only to reduce the number of peripheral driver chips and the pinch seal process,and can be made into light weight,thin and symmetrical appearance of the narrow border panel,so that the overall cost of the liquid crystal panel is reduced,the liquid crystal module is more compact,stronger mechanical reliability,which made the TFT-LCD more welcomed by consumers.However,due to the low carrier mobility of amorphous silicon,a gate driver circuit still occupy a large space,especially with the increase in product display resolution,while the border of the product smaller and smaller,which makes the design of the drive circuit increasingly difficult.Based on the design of a-Si TFT,in this paper,we designed a integrated gate drive circuit with made output signal more faster as the fully conduction by the improved gate voltage of the key TFT,which can be used in high-resolution products to effectively improve the drive capability,reduces layout area,increase the market competitiveness in high-resolution narrow border products.