Research Of Numeric CV Method And Measurement Of SDB Silicon Film's Thickness

Because the requirement of semiconductor product in the world is increased continuously, the development of semiconductor times is guided with the development of semiconductor industry and the large demand of thin silicon wafer, and then the higher request is raised on the research of semiconductor science.The development of semiconductor technology is connected closely with encapsulation, assembly and testing technology. Testing and measurement technology is one of the three key technologies. With the rapid development of electro-information industry, the testing and measurement technology and the relating instrument have turned into the important association of industrialization driven by informatization.The method of seeking semiconductor impurity consistency distributing based on CV character is researched which is used in the measurement of SDB silicon film's thickness formed by silicon and silicon direct chip bonding. The numeric arithmetic of anti-explain by dots and repetitious cycles is provided, and singleness of anti-explain impurity consistency distributing by numeric CV method. The essential reason of the uncertainty and non-astringency of numeric CV method is found. The step-spring impurity distributing is measured successfully by CV method and then the thickness of SDB silicon film is measured exactly. This method is simple, convenient, scatheless and fast, which will provide a well control and testing measure for the industrialized production of SDB silicon wafer.