Growth Of Thin Silicon Epilayer And Fabrication Of SBD Of High Frequency

Schottky Barrier Diode (SBD) is based on the rectification characteristics of metal-semiconductor contact. Comparing with P-N junction, SBD is a majority carrier device. It has low break-over voltage, and can be used at high frequency. So, SBD has been widely used in microwave field.Because of the limitation of thin silicon film epitaxial technology, it is difficult to grow thin silicon film epitaxial of thickness less than 2 m for a long time, which makes the series resistance large. As a result, the cutoff frequency of SBD is limited at a lower level.Now, we can grow sub-micro film of silicon using UHV/CVD technology. Then we make an original device SBD of high frequency.The following is the primary contents of the dissertation:1. Firstly we analyze the requirement of SBD of high frequency for the doping concentration and thickness of the epilayer, for the structure parameter of the device. We design the optimum device parameter based on this.2. Based on the requirement of the device, we grow the films of silicon of high quality. The thickness of the epilayer is from 0.4 u m tol P m, the doping concentration can be controlled conveniently.3. Finally, we explore a serial of other fabrication technology of SBD of high frequency, including oxidation techniques, photoetching techniques and vacuum deposition. An original SBD of high frequency has been made. The ideality factor is 3.2, the break-over voltage is about 0.5V, and the breakdown voltage is 16V.At the present time, the fabrication techniques of high frequency SBD have been applied for patent.