The Study Of Stress Problem In The Process Of IC Substrate

Since the first integrated circuit came out, the proportion of integrated circuit production in semiconductor industry has been getting more and more larger. In microelectronic process, a large amount of stress which deteriorates performance of product is led in processes of slicing, lapping, edging, EPI, diffusion, oxidizing, preparation of electrode and multilevel metallization, especially, process of wafer substrate. Slicing, lapping, and edging all can lead to intensive stress and damage in wafer process because of too intensive and unbalanced mechanical action to wafer substrate, at last cumulating stress come into being. At present damage and stress has become the most important matter which affects quality and finished product ratio of wafer.Slicing and lapping are two basic procedures in wafer substrate process and are introduced firstly in this thesis. There exist large stress, intensive scratch, damage and pollution of ion in wafer process, so it is necessary to improve mechanism of slicing and lapping by changing single mechanical function to equilibrium chemical and mechanical function for small damage and low stress. Reducing damage and stress and enhancing quality and efficiency of product result in a base of followed process so as to improve wafer process and enhance finished product ratio of whole wafer process.This thesis introduces theory of slicing slurry and lapping slurry and analyzes significance and domestic and foreign development of slicing slurry and lapping slurry. The origin slicing slurry and lapping slurry are improved and the properties of suspension, diffusion, osmosis and defoam are enhanced so that the new slicing slurry and lapping slurry are developed, at the same time the ingredient, effect, and theory are introduced. We effectively solve the stress of wafer process and prove the function of the new slicing slurry and lapping slurry in wafer process. Research fruit is applied to manufacture.