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Study On Barrier CMP Material And Technology For 65nm And Below IC With Alkaline Slurry

Posted on:2017-06-20Degree:DoctorType:Dissertation
Country:ChinaCandidate:J J GaoFull Text:PDF
GTID:1368330596957227Subject:Electronic Science and Technology
Abstract/Summary:PDF Full Text Request
The development level of integrated circuit(IC)is an important milestone to measure industrial competitiveness and comprehensive national strength of a country.Chemical mechanical planarization(CMP)is is one of the key processes in IC fabrication and it is the only technique to achieve the global and local planarization.Barrier CMP is the last step in planarization of copper interconnect,and it directly decides the yield and reliability of IC devices.In this dissertation,a new breakthrough has been achieved in theory,material and thehnology in barrier CMP for the industrial requirements of 65 nm technology node as well as 28 nm and 14 nm.Firstly,based on barrier CMP with alkaline FA/O slurries for 65 nm technology node,the theories of copper self-passivation,tantalum/silicon dioxide dielectric interaction with amine have been proposed.Removal rate selectivity for different materials and lower dishing/erosion have been obtained,and dishing/erosion is only about 1/2 and 1/3 respectively,compared to the commercial acid slurry.Stagnant Layer Theory and Preferential Adsorption Theory have been applied for barrier CMP: excellent electrical characteristics of copper interconnect;low particle defect counts(defect<10ea).Upgrade CMP requirements for 65 nm technology node,and promote commercial realization of FA/O barrier CMP slurry.At mean time,targeting stringent planarization requirements and interfacial corrosion in new barrier structures of 28 nm technology node,novel alkaline FA/O barrier slurry has been developed.With the new slurry,low dishing and erosion have been obtined.The interfacial corrosion has been effectively controlled by appling the theory of macromolecule preferential adsorption.This research is significant to the development of microelectronics technology,and new direction for the sub-28 nm technology node has been identified.Secondly,as the feature size scaling down to 14 nm,new barrier materials of Co and Ru can effectively improve the device reliability and reduce leakage current.The CMP quality of Co and Ru is very crucial to the applications.Material removal models have been established for Co and Ru CMP with alkaline FA/O slurries.High selectivity of Co/Ru to copper has been obtained with low abrasive concentration.Dynamic potential polarization curves demonstrate that alkaline barrier slurry can effectively inhibit the galvanic corrosion between Cu and Co/Ru.It provides a new approach for improvement of device.
Keywords/Search Tags:chemical mechanical planarization, alkaline slurry, interfacial corrosion, feature size, galvanic corrosion
PDF Full Text Request
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