The Study Of Alkaline Cu Slurry And Process On TSV CMP

At present,micro electronics technology in accordance with the rapid development of Moore's law,the feature size continues to shrink,the wafer size continues to increase,has now entered the stage of three-dimensional packaging structure.In the 3D process,the fourth generation TSV Technology is a technology that is used for chip stacking in the field of integrated circuits.In order to ensure the reliability and stability of the device,on the surface of the wafer planarization requirement is relatively high,the chemical mechanical planarization of copper interconnection is the key technology to achieve global planarization.So TSV Cu CMP is the main research topic on international technology GLSI.Currently TSV Cu CMP is the focus of international research.General international pulp acidity and contain side effects for large inhibitor benzotriazol(BTA)in order to achieve smooth change request.The existence of strong corrosion,composition is complex,high cost,the volatile is serious and so on are the problems to solve.Therefore,the Cu CMP TSV should be developed to meet the requirements of the new polishing liquid,theory and technology,to solve the problem of acid polishing solution,to further meet the needs of micro electronics industry.In this paper,we use the alkaline polishing solution developed by the Institute of microelectronics,Hebei University of Technology,which has a self passivation effect in containing resist BTA at the same time,can achieve high planarization efficiency.By using the new method and the new method,the global flatness of TSV copper wiring is realized.In this paper,based on the theory of flatness,self passivation and preferential adsorption,a large number of optimization experiments were carried out on the Cu TSV alkaline polishing solution.In copper of rate experiment research,grasp the effect of alkaline slurry in each component of rate of;in copper electrode for electrochemical experiments,summarizes the inactivation of each component in the polishing liquid;finally in copper 12 inch wiring sheet aspirant row flat of experimental research,polishing liquid components of planarization efficiency rules.The results showed that: with increasing oxidant concentration of polishing liquid components,passivation effect is enhanced,copper removal rate first increased and then decreased;with the increase of the chelating agent,removal rate increased at first and then tends to saturation;to achieve better planarization is the effect of oxidant and chelating agent,.The content of abrasive has little effect on copper removal rate,but with the increase of abrasive concentration,the planarization capacity enhancement.Active agent content had little effect on copper removal rate.The polishing process,with the increase of pressure,speed,flow,the copper removal rate increased.The influence of various analysis and research,according to the specific needs and enable timely adjustment in industrial production,the production requirements.Alkaline copper slurry applicant on copper wafer,the results showed that the copper film removal rate can be 2?m/min;in 12 inch copper wiring on TSV chip application,the results show that: after polishing step height turns to 720? and meet the requirements of industrial index,to achieve high planarization efficiency.