Study On 940nm Semiconductor Laser Grown By MBE

In this thesis , the 940nm high power InGaAs/AlGaAs strained quantum well semiconductor laser has been studied. The structure of the strained quantum well laser has been optimized,not only the well layer, the barrier layer , the waveguide layer and the cladding layer but also the content of Al, In have been studied and designed. We studied the factor that influence the quality of GaAs, AlGaAs and InGaAs by MBE, and studied the growth temperature , growth time and the flux ratio of V-III beam. We have grown InGaAs/AlGaAs strained quantum well laser by MBE. We studied the doped density in the cladding layer. Finally, we got the 940nm InGaAs/AlGaAs strained quantum well semiconductor laser.