Research On Applocation Of 1/f Noise In Detecting Latent Damage In MOS Devices

This paper proposes to probe more effective methods for diagnosing reliability of microelectronic devices. Aiming at latent damage induced by ESD, 1/f noise spectrum and a new method similarity coefficient based on the matched maxima of wavelet transform modulus are offered at the same time. In the paper, the ESD stressing tests for n-channel MOSFETs are performed, and main electrical parameters, 1/f noise spectrum and its time series are monitored during the test. It is found that the 1/f noise changes much more sensitive to the ESD latent damage than the electrical parameters, at the same time, similarity coefficient also changes more quickly especially for smaller W/L devices. It is shown in mechanism analysis that 1/f noise originating from border traps is~ sensitive to both of the oxide charges and interface traps induced by ESD and HCI and the similarity coefficient can express the local characterization more thoroughly, while the changes of electrical parameters usually lie on one of the defects. So, both 1/f noise power spectrum measurement and similarity coefficient extracted from its time series can offer economical, effective and indestructible tool to detect the latent damage induced by ESD and HCI for MOSFETs.