Spectroscopy Diagnostics Of The Growth Process Of Conductive Films On Si Substrate

Magnetron sputtering is a kind of physical vapor deposition (PVD) method that has been broadly used to fabricate a variety of thin films. The sputtering processes mainly refer to the complex process of the collision, dissolution, excitation, ionization and nonlinear transportation in the electromagnetism field of the particles and the unbalanced process of the nuclear, diffusion and growth of the film particles on the substrates.In this paper, the relations between the sputtering parameters and the plasma environment changing have been studied by employing Lamgmiur probe diagnostics and spectroscopy diagnostics during the process of depositing Conductive films on Si substrates. The main results include: (1) The electron temperature 2~3 eV and the average electron density of the plasma on the scale about 1011 cm-3 were obtained by the diagnosis of the double Lamgmiur probes near the substrate. The electron density is of break when the sputtering pressures alter in the range of 8~10Pa. (2) Optical emission spectroscopy (OES) was used to diagnose the growth processing of the Cu films. It was found that the sputtering pressures lower than 5 Pa and the power 80W are in favor of growth of polycrystalline and amorphous films. While the pressures above 10 Pa are suited for the growth of the crystal films and the repetition of the fabricated thin films can be ensured. The analysis results of the spectroscopy space resolution show: the change of sheath thickness is of nonlinearity above the substrate with the sputtering power in the range of 60~90 W, the sheath thickness is 5~7mm with the sputtering power below 50W; the electron exciting temperature is about 0.2~0.6eV by calculating the spectra. (3) The results for the Ti-Al film growth from the diagnoses show that the pressures lower than 6 Pa and the power 80W are suitable for the growth of polycrystalline and amorphous film. When the pressure is higher than 10Pa, with the pressure changing, the ratio of Ti-Al component isn't influenced. (4) When preparing LNO films with rf sputtering, the pressure should be below 6Pa when the discharge power is 60W. When the power is higher than 70 W, the components of excitated Ni atoms keep the same. It was found that the components of excitated oxygen ion also keep the same with the power of 50W~60W under the pressures of 4~6 Pa. (5) During the process of depositing LNO films with dc sputtering, the components of excitated Ni atoms doesn't change with the increase of the pressures when the power is invariable and the pressure is higher than 10 Pa. While the components increase with the increase of the power in linearity at an invariable pressure.