Inductively coupled plasma (ICP) has been introduced in detail in this paper first, then expounds the development and application of thin film deposition by magnetron sputtering and introduces several typical sputtering method and their characters. Based on the unbalanced magnetron sputtering plasma, we use inductively coupled plasma assisted sputtering to inspirit plasma and enhance the plasma parameter.In the process of the experiment, we measure the discharge parameter variation with the gas pressure. It is found that theâ… -â…¤character of the unbalanced magnetron sputtering plasma is abnormity glow discharge. At the same discharge voltage, discharge current increases with the gas pressure. With the additional magnetic field, the plasma is confined efficiently and discharge current enhances two times. With the assistance of ICP, discharge voltage decreases linearly and discharge current increases with the increase of rf power at the pressure of 0.2Pa. In addition,the rf discharge transforms from capacitive coupling to inductive coupling at the rf power of 200 W, and the extent of discharge mode decreases with the increase of gas pressure.With the self-made Langmuir probe, we diagnose the ICP assisted unbalanced magnetron sputtering plasma. Based on the two plasma parameters, then we analyze the interaction of the ICP and unbalanced magnetron sputtering plasma. With the sputtering power of 100W, plasma density enhances a factor of three at the rf power of 100 W and plasma density enhances a factor of one point one at the rf power of 300W. At the sputtering power of 100W, we measure the plasma parameter variation with the different position of the discharge room and compare plasma parameter in two rf modes. It is known that it produces uniform, stable and high density plasma in the axial direction at the inductive coupling. Plasma potential has the potential grads in the axial direction, the plasma parameter is enhanced and the space distribution is optimized. Plasma parameter changes roughly in the radial direction only with the unbalanced magnetron sputtering plasma, and the uniform of the radial direction becomes better with increase of the rf power. At the rf power of 100W, we also analyze the electron energy distribution function variation with sputtering power in the axial direction.In the same time, emission spectrometric method is used in the experiment. The Ar atom line (419.83),Ar+ion line (434.81),Cu atom line (324.75) and Cu+ion line (617.20) are collected in order to study the emission intensity variation with the rf power, and then study the plasma parameter in qualitative. At the sputtering power of OW, only a few Cu atom sputter with the negative bias of rf. The emission intensity of Cu atom line enhances sharply with the sputtering power and increases slowly with rf power. The Ar atom line and Ar+ ion line also demonstrate the model change at the rf power of 200W.. |