| Indium oxide is a kind of wide band gap semiconductor, which has a stable chemical property. In recent years, with the widely study on Sn-doped In2O3 films (ITO), it has been using into the flat-panel display, solar cell and optoelectronic devices for its low resistivity and high transparency. However, the experimental condition of high quality In2O3 film is still waiting to explore, the affection from high temperature annealing is not obvious, and the doping of other metal is not put focuses on. So, the study based on the three aspects listed above was done in this thesis.In2O3 thin films were deposited on Si (100) and the slide glass substrates by radio frequency magnetron sputtering, respectively. By changing the experimental parameters, the optimal deposition conditions of In2O3 thin films were obtained. The X-ray diffraction (XRD) analysis showed that all films had the (222) diffraction peak of the body-centered cubic lattice structure. Scanning electron microscopy (SEM) images showed that the films deposited on Si substrates were smooth and compact, and the average grain size was about 25 nm. According to the Scherrer formula, the result was calculated as 28.3 nm. EDX spectra indicated that the films contained In, O and Si, and there were no other elements. On the slide glass substrates, the pyramidal crystalline grains with the about 30 nm size were showed on the surface of the film deposited at the best preparation condition. Using four point probe method, the lowest resistivity of 2.673×10-3 Ω·cm was obtained for the samples deposited on the Si substrates, and was less than the lowest resistivity of 7.940×x10-3 Ω·cm for those deposited on the slide glass substrates. The optical properties of the samples were studied by spectrophotometer. In the visible light range, thin films deposited on Si substrates had a low reflection of 8.0% for the red light at 651 nm. But it had the highest reflection of 17.9% for the green light at 520 nm. The sample had a high transmisivity of 48.1% at 579 nm and the average is about 44.0%.The In2O3 film deposited on the Si (100) substrate under optimum preparation conditions was annealed at 800℃ for one hour. XRD indicated the diffraction peak of the films became narrower and stronger than before annealing. SEM images showed that the particles were bigger than before annealing and the size of grain was about 70 nm, but the more defect was found. The resistivity of the film decreased to 8.566×10-4 Ω. cm and the reflectivity decreased to 6.6% after annealing.Using the method of radio frequency (RF) and direct current (DC) magnetron co-sputtering, Zn-InO3 films were doped by changing the sputtering power, then all films were annealed at 800 ℃ for one hour. XRD patterns indicated that the films were poly crystal with (222) preferred orientation. With the increasing of power, the intensity of the diffraction peak increased but decreased later. After annealing, the intensity of diffraction peak was significantly higher than before. And the diffraction peak of samples deposited on the slide substrates is lowest. The resistivity of the samples decreased with the increasing of the sputtering power, and the lowest resistivity was 8.675×10-4Ω·com after annealing. When the sputtering power reached 60 W, the reflectivity of the Zn-In2O3 film on Si(100) substrate had a high reflection as 9.9% on the red glow area of 664.5 nm. After annealing, the reflectance of the sample increased to 9.8% at 366.7 nm. The average trasmittance of the Zn-In2O3 films deposited on the slide glass substrates reached 78.0% in the visible region.Using the method of radio frequency (RF) and direct current (DC) magnetron co-sputtering, Al-In2O3 films were deposited by changing the sputtering time, then all films were annealed at 800 ℃ for one hour. XRD images showed that the films had (222) preferred orientation and a red shift of the peak was found. After annealing, the intensity of diffraction peak was the strongest. The resistivity of the film deposited on the slide glass substrate was 7.649×10-2Ω·cm. With the increasing of the sputtering time, the resistivity of films increased and then decreased. The maximum reflectivity of 20.2% of Al-In2O3 thin films occurred at a wavelength of 712.2 nm in the infrared region. After annealing, the reflectivity of samples had varied greatly than before. When the sputtering power was 50 W and the deposition time was 10 min, the maximum transmittance of the Al-In2O3 film deposited on the slide glass substrate was 61.5%, and the average transmittance of 51.0% occurred in the visible range. |
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