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Magnetron Sputtering Of Zno Thin Films And Its Characteristics

Posted on:2007-06-20Degree:MasterType:Thesis
Country:ChinaCandidate:Z F TianFull Text:PDF
GTID:2190360185972065Subject:Optics
Abstract/Summary:PDF Full Text Request
ZnO thin films were deposited by the method of DC magnetron sputtering. With the change of the power of magnetron, the change of working pressure, the change of the substrates temperature and thermal annealing temperature on ZnO. ZnO thin films were deposited on glass substrates coated with tin-doped indium oxide (ITO) thin films. Therefore the films can be used as anode phosphor films in field emission displays (FED) directly. The samples were annealed after deposition. X-ray diffraction (XRD), scan electron microscope (SEM) were employed to characterize their structure, morphology. Cathode-luminescence and photoluminescence characteristics of these films were studied by fluorescence spectrophotometer and light intensity meter, respectively. The relations between the luminescence of zinc oxide thin films and their character including crystal structure, composition, the intrinsic defect, etc were investigated, and the best condition of deposition was discovered. It suggested that high crystal quality with strong orientation is important for UV and blue-green emission from ZnO films. ZnO thin films were deposited with N2, NH3, the result suggested that the N was fixed to ZnO thin films . For the research of "diluted magnetic semiconductor" material, we tried to fix the V to the ZnO thin film for the first time.
Keywords/Search Tags:ZnO, magnetron sputtering, field emission displays, photoluminescence, p-type doping, diluted magnetic semiconductor
PDF Full Text Request
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