Research On ZnO Film Preparation And Its Optical Property Using Radio Frequency Magnetron Sputtering

The ultraviolet wave band laser has the characteristics of high storage density and high reaction rate on information display and data storage, which also play a crucial role in application of undersea detection,ultraviolet communication,optical storage,diagnosis for anti-counterfeiting and detecting analytical instrument, showing bright application prospect. Zinc Oxide, as a wide-band-gap semiconductor, with 3.37eV energy-band width and exciton binding energy as high as 60meV, could obtain strong excitonic emission, may become key material of ultraviolet laser, which display an important practical value in ultraviolet-emitting diode,laser and detector, so study on Zinc Oxide will be another hotspot following wide-gap semiconductor. Using radio frequency magnetron sputtering, this paper performs research on preparation for high-quality ZnO,structure and luminescent properties, specific contents as follows:1 .By means of XRD diffraction spectra, sputtering power,substrate temperature,argon-oxygen gas flow ratio,relation between working pressure and grain size and preferred orientation were analyzed ; By the method of controlling variable, main parameters were changed in turn to find excellent film parameters with traits such as lower defect density,film grain fabulous orientation. And ZnO film with preferred orientation in high degree C-axle was obtained under relatively low temperature and relatively lower power.2.By luminescence (PL) of Room Temperature Photoluminescence, the effects of sputtering power,substrate temperature,argon-oxygen gas flow ratio,and pressure on film ultraviolet luminescence and visible light was analyzed. Combined with analysis on structural characteristics of film grain size and orientation, the connection between membrane structure and luminescent properties was studied.3. Combined with preparation conditions and room temperature Photoluminescence spectrum, the conditions that affect ZnO film ultraviolet emission were obtained. By the theory of ZnO defect energy level theory, the mechanism of ultraviolet emission and visible light emission ,optimization on film ultraviolet luminescence were discussed.