| Analog circuit design based on partially depleted (PD) Silicon-on-insulator (SOI) processes requires body-contacted devices in order to avoid floating body effects and the resulting fluctuations in the output characteristic of the device. In this thesis, a simple and high performance novel area efficient body-tied-source contact for PD SOI devices is presented. By simple modification to the physical layout and without introducing any increase to the fabrication process, the proposed body contact can be implemented. Two and three-dimensional device simulations have shown improvement in current drive, on-resistance and breakdown characteristic of the PD SOI MOSFETs. In addition, small-signal analysis of the proposed body-contacted device has shown 16% improvement in gate transconductance compared to conventional body-contacted devices while drain conductance and gate-to-source capacitance are almost equal.; The new body contact structure is applicable to both low- and high-voltage SOI and bulk devices. Three-dimensional device simulation has been used for investigation of the proposed body contact on SOI LDMOSFETs. Improved performance was achieved when comparing on-resistance, current drive and breakdown voltage with the conventional body-contacted structures. |
