Physical modeling of the IGBT and application for smart power IC design

This dissertation presents methodology for physical change-based modeling of a lateral insulated-gate-bipolar transistor (LIGBT) for integrated circuit computer design. The steady-state and transient carrier transport problems in the LIGBT are formulated and solved. The effects of the two-dimensional current analysis in the lateral PNP BJT/LIGBT subcell is characterized, and the current-induced-space-charge region in the LDMOST/LIGBT subcell is modeled. These effects, which are not presented in conventional equivalent-(sub)circuit models, are physically and sometimes semi-numerically accounted for in our model. Improvements on both subcell models of the LIGBT have resulted in accurate simulation results without parameter optimization. The Kirk effect is modeled and added in our LIGBT model. Two-dimensional numerical device simulations were used extensively to study the effects and to aid the model development. The LIGBT model is implemented in the Saber circuit simulator, by which the model equations are solved semi-numerically within the nodal analysis framework of the Saber. The parameter extraction method for Saber simulation is developed. Our new model is verified by measurements of the test devices, using simulations with model parameters extracted from static and dynamic measurements without any optimization to fit the measured data. The LIGBT model in Saber provides the capability for mixed-mode device/circuit simulation and hence can facilitate computer-aided optimal device/circuit design of IGBTs.