Optimal Design Of LIGBT Based On The High Voltage And Thick Soi Film

Single-chip intelligent power module is a integrate circuits of the high voltage and low voltage circuits, such as logic control circuits, chip protection circuit, output circuit and a high voltage lateral insulated gate bipolar transistor and other integrated on the single chip, which can make the whole system a higher integration, lower power consumption, stronger anti-interference ability and lower cost, etc., it has become the core elements of the industrial motors, air conditioners, refrigerators and other small power driver on the system.This thesis focuses on the design of thick film SOI-LIGBT, which can be used in the single-chip of IPM. Firstly, the thesis introduce the basic principle and the characteristics of the thick film SOI-LIGBT, putting forward the basic structure of it. At the basis of the struture, we simulate the basic structure using the 2-D simulation tools, and then compromise the characteristics of the breakdown voltage, threshold voltage and the density of circuit. Aslo we can get the data of the structure and process from the simulation. Secondly, we can build the high voltage interconnect by placed a special fleid plate on the drift region, and then we change the emitter contact to the structure of P+/N+spacing in order to enhance the latchup performance when the device is turning on.Thirdly, we can enhance the current destiny of the on-state by introducing the S-shaped circuit channel on the emitter region. Last but not the least, we simulate the the proposed structure’s characteristics including the breakdown voltage, threshold voltage, the density of the circuit and the anti-latchup performance by using the 3-D simulation tools.comparing them with the traditional structure, based on the 2-D and 3-D design results, a set of optimized process and structure parameter will be gotten, the simulation result will be compared with design target. At last, the process of device production will be briefly analysised and the design of the layout also be carried out.The test results show:The breakdown voltage is 550V, threshold voltage is 2.45V, linear on state current is 231 A/cm2, saturation on state current is 731 A/cm2, latchup voltage is 612V, which all meet the requirements of predefined indicators.