| Silicon-On-Insulator (SOI) Double-Gate devices are very promising candidate for deep sub-micron and low-power low-voltage applications. The transistors exhibit higher drain current, steeper subthreshold slope, and better short-channel effects. They also show strong hardness in hostile environments such as radiative or extreme temperature environments.; The Double-Gate Gate-All-Around (SOI) technology is described in term of device structure, fabrication process, specific properties and device scaling.; Radiation and extreme temperature effects on device parameters are investigated. The specific case of Operational Transconductance amplifiers is studied. A gm/Id-based methodology is applied. The evolution with dose and temperature of the OTAs parameters, such as the DC open-loop gain, gain-bandwidth frequency and stability, are presented and correlated to the transistor parameter evolution.; Two interface trap characterization tools, the charge pumping and the dynamic transconductance techniques, are investigated and applied to GAA devices. The interface trap properties, such as average density, the energy distribution, capture cross-section and time constant are extracted and monitored with total dose.; The output conductance evolution with dose is modeled for n-channel GAA MOSFETs using a modified EKV model. The case of accumulation-mode MOSFETs is investigated and compared to inversion-mode transistors.; The lateral conduction in GAA devices is shown to be very detrimental to circuit performance. Edge implantation is simulated and performed in order to suppress lateral conduction. Edge conduction is characterized by I-V and charge pumping measurements. The radiation response of edge-implanted devices is compared to standard devices.; Mobility is extracted from Hall effect measurements performed on customized GAA-Hall devices at 300K and 77K. The results are compared to the effective mobility.; A new extraction method of the recombination carrier lifetime is presented. The method is based on the measurement of a forward peak current in GAA gated-diodes, when the film is in full depletion. A model based on the SRH recombination rate is developed.; The behavior and properties of the gate-controlled lateral bipolar structure in GAA devices are investigated for application in bandgap reference circuits. Their total-dose and high temperature behavior is illustrated and reproduced by simulations. Operation with interfaces in accumulation shows great improvement of the total-dose hardness of the devices. |
