Scaling induced performance challenges/limitations of on-chip metal interconnects and comparisons with optical interconnects

The miniaturization paradigm for silicon integrated circuits has resulted in a tremendous cost and performance advantage. Aggressive shrinking of devices provides faster transistors and a greater functionality for circuit design. However, scaling induced smaller wire cross-sections coupled with longer lengths owing to larger chip areas, result in a steady deterioration of interconnects. This degradation in interconnect trends threatens to slow down the rapid growth along Moore's law. This work predicts that the situation is worse than anticipated. It shows that in the light of technology and reliability constraints, scaling induced increase in electron surface scattering, fractional cross section area occupied by the highly resistive barrier, and realistic interconnect operation temperature will lead to a significant rise in effective resistivity of modern copper based interconnects.; We start by discussing various technology factors affecting copper resistivity. We, next, develop simulation tools to model these effects. Using these tools, we quantify the increase in realistic copper resistivity as a function of future technology nodes, under various technology assumptions. Subsequently, we evaluate the impact of these technology effects on delay and power dissipation of global signaling interconnects. Modern long on-chip wires use repeaters, which dramatically improves their delay and bandwidth. We quantify the repeated wire delays and power dissipation using realistic resistance trends at future nodes. With the motivation of reducing power, we formalize a methodology, which trades power with delay very efficiently for repeated wires. Using this method, we find that although the repeater power comes down, the total power dissipation due to wires is still found to be very large at future nodes. Finally, we explore optical interconnects as a possible substitute, for specific interconnect applications. We model an optical receiver and waveguides. Using this we assess future optical system performance. Finally, we compare the delay and power of future metal interconnects with that of optical interconnects for global signaling application. We also compare the power dissipation of the two approaches for an upper level clock distribution application. We find that for long on-chip communication links, optical interconnects have lower latencies than future metal interconnects at comparable levels of power dissipation.