| Detectors and electronics are developed for InP-based optoelectronic integrated circuits (OEICs) and photonic integrated circuits (PICs). The devices are realized with practical growth and fabrication techniques, allowing the possibility of large-scale integration. Strained channel high electron mobility transistors are demonstrated with room temperature electron mobilities of 12400 cm2/Vs. An InP etch-stop layer is employed to control the gate recess etch and achieve uniform device performance.; Three detectors are developed for integration with electronic circuits: a p-i-n photodiode with a 40GHz bandwidth, a p-i-n photodiode incorporating an InGaAsPN absorption region for sensing applications from 0.9μm to 1.90μm, and an InAlAs avalanche photodiode for high sensitivity photoreceivers.; A detailed description of the OEIC process is presented. Optical receivers are discussed as a natural application of this integration technology, and test results from fabricated circuits are given. An analysis of both direct detection and coherent smart pixels utilizing the receiver circuits predicts performance superior to pixels demonstrated to date. Flux density-O/E gain products over 100THz/cm2 are expected.; A waveguide p-i-n photodiode utilizing the twin waveguide PIC integration technology is demonstrated. The detector has a bandwidth in excess of 40GHz and a responsivity of 0.75A/W. |
