Research On Key Technology For Microwave And Millimeter Wave Front-end System

With the rapid development of Satellite Communication,Moble Communication and Internet of Things technology in recent years,the demands for high capacity and data-rate of the wireless communication system are becoming higer and higer.The low end of the spectrum has been unable to meet the needs of modern communication,so the high data-rate and broadband of microwave and millimeter-wave frequency front-end circuit has attracted great attention from academic research community and industry field.The transceiver front-end circuits arethe important parts of the wireless communication system which include antenna,low noise amplifier,power amplifier,mixer,switch and so on.Implementation of the microwave and millimeter-wave frequency front-end circuits on CMOS technology is attractive due to its low cost and highly integrated.However,there are still some urgent problems to be solved in CMOS technology such as high substrate loss,and the performance of circuit could be easily influenced by Process variation,Voltage variation,Temperature variation and so on.These presents the new requirements and challenges of the modeling technology and circuit design method for microwave and millimeter-wave frequency front-end.Thus,in this dissertation,both the modeling technology and the circuit design method are study,where we proposed a new transmission line model and transistor behavioral model,and designed a self-healing power amplifier which responses to the PVT variation,a novel series-shunt SPDT switch and on-chip antennas aim at CMOS substrate loss.The main contributions are listed as follows:1)To improve the accuracy of on-chip transmission line model in microwave andmillimeter-wave frequency,the RLGC transmission line models are studied.Based on analysis of frequency-dependent RLGC model,the fractional-order RLGC model and high frequency effects such as dispersion,radiation and nonquasi-static effects,the memory-dependent derivative was adopted to model the TLs for first time.Three models are compared for on-chip CPW transmission lines over a wide frequency ranges from DC up to 67 GHz in SMIC 65 nm and TSMC 90 nm technology.And the simulation results show the memory-dependent RLGC model is much more accurate and wider bandwidth than others.2)In order to achieve good accuracy of transistor large signal models and reflect the change of load impedance,this dissertation presents a novel behavioral model which is based on quadratic polynomial expansion of nonlinear scattering function implemented with Frequency Domain Defined Device(FDD)component in the Advance Design System(ADS).The comparisons of the output voltages are presented and discussed under different load impedance and input power on WIN PP1010MS pHEMT operating at 20 GHz,and the results show that the model is capable of accurately characterizing the device without adding the complexity.And a 20 GHz power amplifier was designed to validate the new model.3)In order to reduce the effect of unpredictable PVT variation on circuit performance,a self-healing 60 GHz power amplifier is proposed,fabricated on TSMC 90 nm CMOS process.The power amplifier is designed with on-chip varactor-based tunable load matching networks and embedded DC temperature sensor based power detector,the analysis and simulation results show that it can self-healing against PVT variation.4)To decrease the influence of CMOS substrate loss against switch performance,a novel loss compensation technique for series-shunt SPDT switch is presented operating in the 60 GHz implemented on TSMC 90 nm CMOS technology.The feed-forward compensation network which is composed of a NMOS,a coupling capacitor and a shunt inductor can reduce the impact of the feed forward capacitance to reduce the insertion loss and improve the isolation of the SPDT switch.5)In order to improve the performance of the microwave and milllimeter-wave antenna,the metamaterial is studied.Two novel broadband and compact co-planar waveguide(CPW)based S band resonant antennas are proposed by using two CRLH-TL cells implemented on a F4BM220 substrate.The measurement results show that the novel geometry can greatly extend the bandwidth of the miniaturized zeroth order resonator(ZOR)antenna and dual-band antenna.Besides,an on-chip 60 GHz CRLH-TL compact resonant antenna is proposed for first time with an Artificial Magnetic Conductor implemented on bottom metal based on TSMC 90 nm CMOS technology.The cross-shaped of Artificial Magnetic Conductor is used to reflect the electromagnetic wave to improve the gain and expand the bandwidth of the antenna.