| Due to the advantages of small size, light weight, high reliability and stability, microwave and millimeter-wave monolithic integrated circuits (MMICs) are widely used in military fields, such as satellite communication, phased-array radar system and electronic warfare system. Also there is a large market for the MMIC using in the civil fields. The PHEMT (pseudomorphic high electron mobility transistor) device has outstanding high-frequency characteristics, power characteristics and low-noise characteristics, and it is one of the most competitions in the field of microwave and millimeter-wave monolithic integrated circuits. This paper designs some Ka-band receiver components monolithic integrated circuits, which are fabricated by a commercial 0.2μm GaAs PHEMT process. Major contents of the paper are abstracted as following:(1) A Ka-band two stage low noise amplifier (LNA) MMIC is designed. The LNA achieves a gain of more than 10 dB and a noise figure of less than 3.5 dB in the frequency range of 29-33 GHz.(2) A Ka-band four stage broadband LNA MMIC is designed. For the application of self-bias technique, the LNA is biased from a single power supply. The power consumption of the LNA is only 81 mW. The LNA achieves a gain of more than 18 dB and a noise figure of less than 3.8 dB in the whole Ka-band.(3) A Ka-band broadband image rejection mixer MMIC, which uses a Lange Coupler to realize the broadband characteristic of the mixer, is designed. The mixer achieves a conversion loss of less than 12.6 dB and an image rejection ratio of more than 20.4 dB in the frequency range of 30-38 GHz.(4) A Ka-band broadband fourth-harmonic image rejection mixer MMIC is designed. The unit mixer uses a 0°/180°Marchand Baluns and two resistive FET mixers to realize even harmonic mixing. The Lange Coupler is used at RF port to realize the broadband characteristic. The mixer is the first fourth-harmonic image rejection mixer to the author's knowledge. The chip size of the mixer is greatly reduced by using the miniaturization technique, which is equal to or even smaller than that of the reported Ka-band monolithic sub-harmonic image rejection mixer. The miniaturization technique also can be used to other millimeter-wave monolithic integrated circuits.(5) An ultra-wideband active doubler MMIC is designed. The chip consists of two parts: balanced doubler and amplifier. The balanced doubler, which can reject odd harmonic, consists of active balun and two unit FET doublers. The amplifier, which can operate over a broadband frequency range, consists of distributed amplifier and two stage common souce amplifier. The doubler MMIC operates with input frequency of 1.5 to 25 GHz, which is more than four octave frequency ranges, and achieves a conversion gain of more than 0 dB with input frequency of 1.5 to 20 GHz. The doubler MMIC can multiply the microwave signal to Ka-band signal.(6) The modeling method for passive elements in microwave and millimeter-wave monolithic integrated circuits has been studied. Electromagnetically trained artificial neural network (EM-ANN) model for microstrip Lange Coupler is presented. The model can provide the same accuracy as the Full-wave EM simulation, but the computing time is extremely short compare to the EM simulation method. The model can be used to design and optimize the Lange Coupler circuit. The Support Vector Machine (SVM) regression method has been introduced into modeling of the MIM (metal-insulator-metal) capacitor. The model presented in this paper is useful for interactive CAD application, which proves the validity of the SVM regression method in microwave and millimeter-wave passive elements modeling. The two modeling methods introduced above also can be used for modeling the other passive elements in microwave and millimeter-wave monolithic integrated circuits.
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