Studies Of Long-wavelength Vertical-Cavity Surface-Emitting Laser Materials And Physics

This thesis focuses on the design of long-wavelength Vertical-Cavity Surface-Emitting Lasers (VCSELs), growth of device structure materials and characterizations.The transfer matrix of optical wave propagation is obtained using Maxwell equations and the continuous condition of electromagnetic wave at the interface of multiple layers, which is a useful method to calculate the reflectivity of multiple layers. The reflectivity spectrum of distributed Bragg reflector (DBR) and the stop-band deviation are investigated at different incident angle of light. With the increasing of incident angle, the reflectivity spectra of TE mode and TM mode shifted to short wavelength, stop-band width of TE mode increases, stop-band width of TM mode decreases.The variation of reflectivity spectra for the VCSELs with the change of incident angle, optical thickness of resonance cavity and optical thickness of DBR are investigated. With the optical thickness change of VCSEL cavity, the stop-band position of VCSEL reflectivity spectrum demonstrates a little shift, and the cavity mode shows linear change. With the change of DBR optical thickness, however, the cavity mode displays a bigger linear change, the changing rate is 1.75. The change of DBR optical thickness has greater effect on VCSEL performance than the change of cavity optical thickness. The optical field distributions in DBR and VCSEL have been calculated through transfer matrix and wave equation by varying the orders of low and high refractive index materials to different exit media and investigate the effect of different exit media to optical field distribution in the VCSEL. Considering the phase change when the light reflects from the metal film, the phase change of Au film has been calculated, and a phase matching layer (PML) has been proposed. By calculation of the reflectivity change with different thickness of PML, a new DBR+PML+Au high-reflectivity synthesized DBR cavity mirror is designed, which improves the reflectivity in the stop-band.The compressive InAsP layer and tensile InGaAsP layer are grown by gas source molecular beam epitaxy (GSMBE). And they are characterized through (004) symmetric...