The Research Of Fabrication Procedures On Oxide-Confined Vertical-Cavity Surface-Emitting Lasers

Vertical-cavity surface-emitting lasers(VCSEL's) have distinct advantages over conventional edge emitting lasers, such as small divergence angle, single longitudinal mode operation and very low threshold current. They are especially suitable for making two-dimensional(2-D) arrays as well as VCSEL's based integrate devices. VCSEL's are attractive light source for various applications including optical message processing, optical interconnection and optical calculation.For the AlGaAs/GaAs VCSEL fabrication, oxide-confined structure provid electrical and optical confinement. AlGaAs/GaAs VCSEL fabricated by selective oxidation and selective etching. The lowest threshold current 1.8mA is achieved with continuous-wave at room temperature, the maximum output power is 7.96mW.For the resesrch work on the fabrication procedures, we discusses selective oxidation and selective wet etching. We found that the oxidation rate of AlxGa1-xAs layer is related to the Al concentration ,the thickness of AlxGa1-xAs layer ,the reaction temperature and the carrier gas flow. At last, we make sure the suitable condition of oxidation.