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Percolation Methodology For The Modeling And Simulation Of The Reliability Issues Of Microelectronics Devices

Posted on:2006-09-11Degree:DoctorType:Dissertation
Country:ChinaCandidate:Z F MaFull Text:PDF
GTID:1118360182960125Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
For the first time, percolation methodology was applied to the modeling and simulation of microelectronics reliability issues.In recent years, silicon CMOS continually develops to high speed, high density and low consumption. Thus while the gate oxide of MOSFETs becomes thinner, the electric field in the gate oxide becomes stronger. While the cross section of the metallic interconnects becomes smaller, the current density through it becomes larger. And while the size of MOFETs becomes smaller, the influence of the low frequency noise becomes more significant. All the mentioned factors above imperil the reliability of modern VLSI system.The key problem for modeling the reliability issues of microelectronics devices is how to describe the randomicity and spatial distribution effects related to the degradation process, including the randomicity and spatial distribution effects of the stress current, voltage, heat and the defects generated, which may affect the degradation process greatly.All the reliability issues can be classified into two processes, the defects generating process and the defects interaction process. For different problems, defects have different meanings.According to percolation theory, all the processes related to the degradation processes of reliability of microelectronic devices can be modeled as a geometrical-connection problem. By this way, on the basis of degradation mechanisms, a spatio-temporal accurate depiction of the degradation processes can be obtained. Also, by resizing time and space scales, both veracity and facility can be achieved in the simulation process at the same time.The time-dependent dielectric breakdown of the gate oxide, the electro-migration of the metallic interconnects, the 1/f noise in small size MOSFETs and the RTS noise in submicron MOSFETs were chosen as the objects of this study. And percolation models of these processes were built.Using programs written in MATLAB language, the mentioned processes above were simulated. And the simulated results were analyzed and compared with the experimental results, while the simulated ones show good qualitative agreements.This work created a brand new method for the modelling and simulation of thereliability issues of microelectronics devices.
Keywords/Search Tags:reliability, percolation, modeling, simulation, TDDB, electromigration, 1/f noise, RTS noise
PDF Full Text Request
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