| Author: Wei LiSupervisors: Profs. S. C. Zou and X. WangThis thesis aims at the practical aPplication of field emission display (FED), and.is composed of three pwts, design and manufacture of FED prototrpes, preparation ofphosphor lnyers for FED anode screens, and investigation of photoluminescence ofZnO:Zn phosphor thin films.Part l. The author took the Iead in R&D of FED devices and the studywa8 among the nr8t work in this field reported in china. Thosorts of FED prototype8 were de8igned and manufactured withsome proprietary tcchnologies. Ba8ed on the prototype8, acomplete production proces8, which can be extcnded to u8e inindustrp wa8 outlined.Wth reference of vacuum fluorescence display (VFD), non-matrix-addressedmonochrOmic FED prototypes were constructed. A unique idea using cathodeelectrodes as the spacer was put forwarded and realized in the manufactUfC of thiskind of FED protOtype devices. The effective display area is 1.5xl inches and theintemal pressure in the devices is l0-'-l0'Pa, which could meet the demand of FEDdevices. Based on the latest research resuIts in the cathode and anode materiaIs, al .5xl inches matrix-addressed monochromic FED prototyPe, Which contained 50x50electrOdes to form the matrix, was designed. Cathode and anode masks were designedand produced to fabricate pattemed cathodes and anodes. The cathode and anodeplates were direct-sealed successfully by using etched thin glass slides (50/l00Um) asspacers, which provided a key solution for the practicability of FED technology. Theteclmiques used in the manufacture of parts and the package all meet the standards invacuum microelectronics and, therefore, were universal for the production of FEDdevices with diode structures. The developed technology could be easily trallsferred toindustryPart 2. In order to Preveut cracking of the Phosphor Iaycrs oI anode.screens in FED deviccs, ZnO:Zn pho8phor layers were prcparcdby electropboretic depo8ition, fOllowcd by treatmcnt in Na,SiO,solution. In a vacuum euvironment 8imuIating the FEDoperation condition8, the 8creeu8 compo8ed of the ZnO:Znlayers were te8ted and resuIts skown tbat no any crackingoccurred, which implie8 that one of the key prohlems in FEDdevice manufacture was resoIved.A model describing the thickness of phosphor layers was established. Accordingto the calculating results, the optimal photoluminescence (PL) efficiency wasobtained when the screen was consisted of 2-3 layers of phosphor powders. Thedeposited weigh and PL intensity of the dePosited phosphor layers versus dePositiontime and electfophoretic voltage was studied. The best combination of the thicAnessand PL intCnsity was achieved at deposition time of 2-4min and voltage of 200VAfter treated in Na2SiO, solution, the phosphor layers showed no changes in the PLwavelength bul the PL illtensity lost l5%. SEM and SIMS examinations revealed thatthe thin films of Na2SiO, binder covered and connected the phosphor powders.Meanwhile, a protecting layer was formed on the surface of the phosphor layers andIn,O, addition also concentrated near the surface. A vacuum system for simulatingFED operation envirorunent was built to observe the cathodoluminecent iniCnsity andthe damage of the screens coatCd with the phosphor layers. The Na2SiO, treatedphosphor layers needed higher voltage to be lighted on, howevef, no crackinghaPpened even at 3000V for 3h. Furthermore, two types of damage, discharge andmelt, were observed during the test.Part 3. Witb the goal of repIacing the rclativcly rough phosPhor Iayerhy supcr nat pkosphor thin film finally in FED device8, zno:znpkosphor thin films wcre PreParcd and studied, particuIarlyfOcusing on their photolumine8cencc behavior. It was fOund thatPL inten8ity of the films was affectcd by thrce factors withvaricd attributions whcn anncalcd at diffcrcnt tempcraturcranges. In addition, the Pbo8phor thin films with topograpby ofi...
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